Dream of Spring : Mazurka

https://digitalcommons.library.umaine.edu/mmb-ps/2860/thumbnail.jp

Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs

The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography. pHEMTs with a transconductance of 600 mS/mm, off state breakdown voltages >2 V, fτ of 120 GHz, f max of 180 GHz and MAG of 13.5 dB at 60 GHz are reported